bc556 to bc558 document number 85133 rev. 1.2, 16-nov-04 vishay semiconductors www.vishay.com 1 2 1 3 e b c 18979 1 2 3 small signal transistors (pnp) features ? pnp silicon epitaxial planar transistors for switching and af am plifier applications. these transistors are subdivided into three groups a, b, and c according to their current gain. the type bc556 is available in groups a and b, how- ever, the types bc557 and bc558 can be supplied in all three groups. as complementary types, the npn transistors bc546...bc548 are recom- mended. on special request, these transistors are also manufactured in the pin configuration to-18. mechanical data case: to-92 plastic case weight: approx. 177 mg packaging codes/options: bulk / 5 k per container 20 k/box tap / 4 k per ammopack 20 k/box parts table part ordering code remarks bc556a bc556a-bulk or bc556a-tap bulk / ammopack bc556b bc556b-bulk or bc556b-tap bulk / ammopack bc557a bc557a-bulk or bc557a-tap bulk / ammopack bc557b bc557b-bulk or bc557b-tap bulk / ammopack bc557c bc557c-bulk or bc557c-tap bulk / ammopack bc558a bc558a-bulk or bc558a-tap bulk / ammopack bc558b bc558b-bulk or bc558b-tap bulk / ammopack bc558c BC558C-BULK or bc558c-tap bulk / ammopack
www.vishay.com 2 document number 85133 rev. 1.2, 16-nov-04 bc556 to bc558 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified 1) valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. maximum thermal resistance 1) valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. electrical dc characteristics parameter test condition part symbol value unit collector - base voltage bc556 - v cbo 80 v bc557 - v cbo 50 v bc558 - v cbo 30 v collector - emitter voltage bc556 - v ces 80 v bc557 - v ces 50 v bc558 - v ces 30 v bc556 - v ceo 65 v bc557 - v ceo 45 v bc558 - v ceo 30 v emitter - base voltage - v ebo 5v collector current - i c 100 ma peak collector current - i cm 200 ma peak base current - i bm 200 ma peak emitter current i em 200 ma power dissipation t amb = 25 c p tot 500 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air r ja 250 1) c/w junction temperature t j 150 c storage temperature range t s - 65 to + 150 c parameter test condition part symbol min ty p max unit small signal current gain (current gain group a) - v ce = 5 v, - i c = 2 ma, f = 1 khz h fe 220 small signal current gain (current gain group b) - v ce = 5 v, - i c = 2 ma, f = 1 khz h fe 330 small signal current gain (current gain group c) - v ce = 5 v, - i c = 2 ma, f = 1 khz h fe 600 input impedance (current gain group a) - v ce = 5 v, - i c = 2 ma, f = 1 khz h ie 1.6 2.7 4.5 k ? input impedance (current gain group b) - v ce = 5 v, - i c = 2 ma, f = 1 khz h ie 3.2 4.5 8.5 k ? input impedance (current gain group c) - v ce = 5 v, - i c = 2 ma, f = 1 khz h ie 68.715k ? output admittance (current gain group a) - v ce = 5 v, - i c = 2 ma, f = 1 khz h oe 18 30 s output admittance (current gain group b) - v ce = 5 v, - i c = 2 ma, f = 1 khz h oe 30 60 s output admittance (current gain group c) - v ce = 5 v, - i c = 2 ma, f = 1 khz h oe 60 110 s reverse voltage transfer ratio (current gain group a) - v ce = 5 v, - i c = 2 ma, f = 1 khz h re 1.5 x 10 -4
bc556 to bc558 document number 85133 rev. 1.2, 16-nov-04 vishay semiconductors www.vishay.com 3 electrical ac characteristics reverse voltage transfer ratio (current gain group b) - v ce = 5 v, - i c = 2 ma, f = 1 khz h re 2 x 10 -4 reverse voltage transfer ratio (current gain group c) - v ce = 5 v, - i c = 2 ma, f = 1 khz h re 3 x 10 -4 dc current gain (current gain group a) - v ce = 5 v, - i c = 10 ah fe 90 dc current gain (current gain group b) - v ce = 5 v, - i c = 10 ah fe 150 dc current gain (current gain group c) - v ce = 5 v, - i c = 10 ah fe 270 dc current gain (current gain group a) - v ce = 5 v, - i c = 2 ma h fe 110 180 220 dc current gain (current gain group b) - v ce = 5 v, - i c = 2 ma h fe 200 290 450 dc current gain (current gain group c) - v ce = 5 v, - i c = 2 ma h fe 420 500 800 dc current gain (current gain group a) - v ce = 5 v, - i c = 100 ma h fe 120 dc current gain (current gain group b) - v ce = 5 v, - i c = 100 ma h fe 200 dc current gain (current gain group c) - v ce = 5 v, - i c = 100 ma h fe 400 collector saturation voltage - i c = 10 ma, - i b = 0.5 ma v cesat 80 300 mv - i c = 100 ma, - i b = 5 ma v cesat 250 650 mv base saturation voltage - i c = 10 ma, - i b = 0.5 ma v besat 700 mv - i c = 100 ma, - i b = 5 ma v besat 900 mv base - voltage - v ce = 5 v, - i c = 2 ma v be 600 660 700 mv - v ce = 5 v, - i c = 10 ma v be 800 mv collector-emitter cut-off current - v ce = 80 v bc556 i ces 0.2 15 na - v ce = 50 v bc557 i ces 0.2 15 na - v ce = 30 v bc558 i ces 0.2 15 na - v ce = 80 v, t j = 125 c bc556 i ces 4 a - v ce = 50 v, t j = 125 c bc557 i ces 4 a - v ce = 30 v, t j = 125 c bc558 i ces 4 a parameter test condition part symbol min ty p max unit gain bandwidth product - v ce = 5 v, - i c = 10 ma, f = 100 mhz f t 150 mhz collector - base capacitance - v cb = 10 v, f = 1 mhz c cbo 6pf noise figure - v ce = 5 v, - i c = 200 a, r g = 2 k ? , f = 1 khz, ? f = 200 hz bc556 f 2 10 db bc557 f 2 10 db bc558 f 2 10 db parameter test condition part symbol min ty p max unit
www.vishay.com 4 document number 85133 rev. 1.2, 16-nov-04 bc556 to bc558 vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) figure 1. admissible power dissi pation vs. ambient temperature figure 2. dc current gain vs. collector current figure 3. pulse thermal resistance vs. pulse duration 500 400 300 200 100 0 0 20 40 60 8 0 100 120 140 160 1 8 0 200 p - admissi b le po w er dissipation (m w ) tot t - am b ient temperat u re (c) am b 191 8 1 1000 100 10 1 1 100 10 0.1 0.01 h - dc c u rrent gain fe i - collector c u rrent (ma) c 191 8 3 - v = 5 v ce 100 c - 50 c t = 25 c am b 191 8 2 1000 100 10 0.1 1 1 100 10 10 10 10 10 10 10 -1 -2 -3 -4 -5 -6 r - p u lse thermal resistance (c/ w ) tha t p t - p u lse length (s) p t p p i t t = 0.2 0.1 0.05 0.02 0.01 0.005 =0 figure 4. collector-base cut-off current vs. ambient temperature figure 5. collector current vs. base-emitter voltage figure 6. collector-base capac itance, emitter-base capacitance vs. bias voltage 100 10 0.1 1 1000 10000 0 20 40 60 8 0 100 120 140 160 1 8 0 200 test v oltage - v : e qu al to the gi v en maxim u m v al u e- v cbo ceo typical maxim u m 191 8 4 -i - collector-base c u t-off c u rrent (na) cbo t - am b ient temperat u re (c) am b 100 10 0.1 1 0 0.5 1 i - collector c u rrent (ma) c v - base-ermitter v oltage ( v ) be - v = 5 v ce 25 c -50 c t = 100 c am b 191 8 5 20 10 0 0.1 1 10 t = 25 c am b c ebo c cbo c / c - collector / emitter base capacitance (pf) ebo cbo ebo - v , - v - re v erse bias v oltage ( v ) cbo 191 8 6
bc556 to bc558 document number 85133 rev. 1.2, 16-nov-04 vishay semiconductors www.vishay.com 5 figure 7. collector saturation voltage vs. collector current figure 8. relative h-parameters vs. collector current figure 9. gain-bandwidth product vs. collector current 25 c - 50 c t = 100 c am b -i /-i =20 c b - v - collector sat u ration v oltage ( v ) cesat i - collector c u rrent (ma) c 0.5 0.4 0.3 0.2 0.1 0 1 100 10 0.1 191 8 7 10 1 0.1 1 i - collector c u rrent (ma) c 10 100 0.1 e h (i ) / h (-i = 2 ma) e c h ie h oe h re h fe - v =5 v ce t = 25 c am b 191 88 c 0.1 1 10 100 10 100 1000 f - gain-band w idth prod u ct (mhz) r i - collector c u rrent (ma) c 191 8 9 t = 25 c am b - v = 10 v ce 5 v 2 v
www.vishay.com 6 document number 85133 rev. 1.2, 16-nov-04 bc556 to bc558 vishay semiconductors packaging for radial taping dimensions in mm 1 12.7 1 0.3 0.2 1 -0.5 18 12 0.3 9 0.5 4 0.2 12.7 0.2 6.3 0.7 5.08 0.7 2.54 + 0.6 - 0.1 measure limit over 20 index - holes: 1 "h" vers. dim. "h" fsz 27 0.5 0.9 max 2 18787
bc556 to bc558 document number 85133 rev. 1.2, 16-nov-04 vishay semiconductors www.vishay.com 7 package dimensions in mm (inches) bottom view 4.6 (0.181) 3.6 (0.142) min. 12.5 (0.492) 4.6 (0.181) max. 0.55 (0.022) 2.5 (0.098) 18776
www.vishay.com 8 document number 85133 rev. 1.2, 16-nov-04 bc556 to bc558 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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